[Uncategorized] Rectifier & Schottky Diodes

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제조업체 부품번호 TRS12E65C,S1Q(S

제조업체 Toshiba

규격 Toshiba TRS12E65C,S1Q(S SiC Schottky Diode, 650V 12A, 2-Pin TO-220

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제품 세부 사항

Silicon Carbide (SiC) Schottky Diode, Toshiba

A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high speed switching applications.

 

Diode Configuration Single   Maximum Continuous Forward Current 12A   Number of Elements per Chip 1   Peak Reverse Repetitive Voltage 650V   Mounting Type Through Hole   Package Type TO-220   Diode Type SiC Schottky   Diode Technology SiC Schottky   Pin Count 2   Maximum Forward Voltage Drop                                 1.7V   Length 10.03mm   Width 4.45mm   Height 15.11mm   Maximum Operating Temperature +175 °C   Dimensions 10.03 x 4.45 x 15.11mm   Peak Reverse Current 90µA   Peak Non-Repetitive Forward Surge Current 60A