[Uncategorized] Miscellaneous

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 Infineon

 

 

 

Pwr MOSFET, 100V Single N-Ch. HEXFET; I-PAK

 

 

 

Capacitance, Input:800 pF @ 25 V
Channel Type:N
Configuration:Dual Drain
Current, Drain:17 A
Dimensions:6.73 x 2.39 x 6.22 mm
Gate Charge, Total:34 nC
Height:0.245" (6.22mm)
Length:0.264" (6.73mm)
Mounting Type:Through Hole
Number of Elements per Chip:1
Number of Pins:3
Package Type:I-PAK
Polarization:N-Channel
Power Dissipation:79 W
Product Header:Hexfet® Power MOSFET
Resistance, Drain to Source On:0.155 Ω
Series:HEXFET Series                                                               
Temperature, Operating, Maximum:+175 °C
Temperature, Operating, Minimum:-55 °C
Temperature, Operating, Range:-55 to +175 °C
Time, Turn-Off Delay:30 ns
Time, Turn-On Delay:7.2 ns
Transconductance, Forward:7.7 S
Typical Gate Charge @ Vgs:Maximum of 34 nC @ 5 V
Voltage, Breakdown, Drain to Source:100 V
Voltage, Drain to Source:100 V
Voltage, Forward, Diode:1.3 V
Voltage, Gate to Source:±16 V
Width:0.094" (2.39mm)