[Uncategorized] MOSFET Transistors

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제품 세부 사항

 

 Channel Type                                                 N
 Maximum Continuous Drain Current42 A
 Maximum Drain Source Voltage1200 V
 Maximum Drain Source Resistance120 mΩ
 Maximum Gate Threshold Voltage4.8V
 Minimum Gate Threshold Voltage3.2V
 Maximum Gate Source Voltage-5/+20 V
 Package TypeTO-247
 Mounting TypeThrough Hole
 Pin Count3
 Transistor ConfigurationSingle
 Channel ModeEnhancement
 CategoryPower MOSFET
 Maximum Power Dissipation215 W
 Dimensions16.13 x 5.21 x 21.1mm
 Number of Elements per Chip1
 Width5.21mm
 Transistor MaterialSiC
 Typical Turn-On Delay Time13 ns
 Minimum Operating Temperature-55 °C
 Typical Gate Charge @ Vgs90.8 nC @ 0/20 V
 Typical Input Capacitance @ Vds1915 pF @ 800 V
 Height21.1mm
 Maximum Operating Temperature+135 °C
 Length16.13mm
 Forward Transconductance7.9S
 Typical Turn-Off Delay Time40 ns
 Forward Diode Voltage3.5V